Print ISSN:1674-1056  |  Online ISSN:2058-3834  |  CN:11-5639/O4
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    Hui-De Wang, David K Sang, Zhi-Nan Guo, Rui Cao, Jin-Lai Zhao, Muhammad Najeeb Ullah Shah, Tao-Jian Fan, Dian-Yuan Fan, Han Zhang. Black phosphorus-based field effect transistor devices for Ag ions detectionJ. Chin. Phys. B, 2018, 27(8): 087308.
    Hui-De Wang, David K Sang, Zhi-Nan Guo, Rui Cao, Jin-Lai Zhao, Muhammad Najeeb Ullah Shah, Tao-Jian Fan, Dian-Yuan Fan, Han Zhang. Black phosphorus-based field effect transistor devices for Ag ions detectionJ. Chin. Phys. B, 2018, 27(8): 087308.
  • Black phosphorus-based field effect transistor devices for Ag ions detection

    • Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelectronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag+ will harm human health. Therefore, high sensitive, fast and simple Ag+ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag+ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag+ is 10-10 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag+ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag+, especially in witnessed inspections field of food.
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