Pressure-induced enhancement of optoelectronic properties in PtS₂

PtS₂, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressure-dependent below 3 GPa but increases significantly in the pressure range of 3 GPa-4 GPa, with a maximum~6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to 26.8 GPa, which indicates a stable lattice structure of PtS₂ under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi-direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.