Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET. It is found that the FinFET with scaled fin dimensions exhibits much flatter G_m characteristics than the one with long fins as well as planar HEMT. According to the comparative study, we provide direct proof that source resistance rather than tri-gate structure itself dominates the G_m behavior. Furthermore, power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT. This study also highlights the importance of fin design in GaN-based FinFET for microwave power application, especially high-linearity applications.