Print ISSN:1674-1056  |  Online ISSN:2058-3834  |  CN:11-5639/O4
  • Cite this article:

    Yong Zhang. Electronic structures of impurities and point defects in semiconductorsJ. Chin. Phys. B, 2018, 27(11): 117103.
    Yong Zhang. Electronic structures of impurities and point defects in semiconductorsJ. Chin. Phys. B, 2018, 27(11): 117103.
  • Electronic structures of impurities and point defects in semiconductors

    • A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for “shallow” and “deep” impurities and point defects. The underlying physics of computational results using different density-functional theory-based approaches are discussed and interpreted in the framework of the bound exciton model.
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