Cite this article:
Lu Zhang, Yongsheng Wang, Yanfang Dong, Xuan Zhao, Chen Fu, Dawei He. Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor depositionJ. Chin. Phys. B, 2018, 27(1): 018101.
| Lu Zhang, Yongsheng Wang, Yanfang Dong, Xuan Zhao, Chen Fu, Dawei He. Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor depositionJ. Chin. Phys. B, 2018, 27(1): 018101. |
Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition
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Abstract
The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous. -
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