Ultrafast interlayer photocarrier transfer in graphene-MoSe₂ van der Waals heterostructure

We report the fabrication and photocarrier dynamics in graphene-MoSe₂ heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe₂ monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe₂ of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe₂. These results illustrate the potential applications of this material in optoelectronic devices.