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    Yong-Chen Xiong, Jun Zhang, Wang-Huai Zhou, Amel Laref. Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot deviceJ. Chin. Phys. B, 2017, 26(9): 097102.
    Yong-Chen Xiong, Jun Zhang, Wang-Huai Zhou, Amel Laref. Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot deviceJ. Chin. Phys. B, 2017, 26(9): 097102.
  • Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device

    • The transport property and phase transition for a parallel triple dot device are studied by adopting Wilson's numerical renormalization group technique, focusing on the effects of level spacings between neighboring dot sites. By keeping dot 2 at the half-filled level and tuning the level differences, it is demonstrated that the system transits from local spin quadruplet to triplet and doublet sequently, and three kinds of Kondo peaks at the Fermi surface could be found, which are separated by two Kosterlitz-Thouless type quantum phase transitions and correspond to spin-3/2, spin-1, and spin-1/2 Kondo effect, respectively. To obtain a detailed understanding of these problems, the charge occupation, the spin-spin correlation, the transmission coefficient, and the temperature-dependent magnetic moment are shown, and necessary physical arguments are given.
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