Cite this article:
Yangfeng Li, Yang Jiang, Junhui Die, Caiwei Wang, Shen Yan, Ziguang Ma, Haiyan Wu, Lu Wang, Haiqiang Jia, Wenxin Wang, Hong Chen. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structureJ. Chin. Phys. B, 2017, 26(8): 087311.
Yangfeng Li, Yang Jiang, Junhui Die, Caiwei Wang, Shen Yan, Ziguang Ma, Haiyan Wu, Lu Wang, Haiqiang Jia, Wenxin Wang, Hong Chen. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structureJ. Chin. Phys. B, 2017, 26(8): 087311.
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
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Abstract
The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence (EL) of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power (LOP) at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions. -
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