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    Rongxuan Deng, Haoran Zhang, Yanhui Zhang, Zhiying Chen, Yanping Sui, Xiaoming Ge, Yijian Liang, Shike Hu, Guanghui Yu, Da Jiang. Graphene/Mo2C heterostructure directly grown by chemical vapor depositionJ. Chin. Phys. B, 2017, 26(6): 067901.
    Rongxuan Deng, Haoran Zhang, Yanhui Zhang, Zhiying Chen, Yanping Sui, Xiaoming Ge, Yijian Liang, Shike Hu, Guanghui Yu, Da Jiang. Graphene/Mo2C heterostructure directly grown by chemical vapor depositionJ. Chin. Phys. B, 2017, 26(6): 067901.
  • Graphene/Mo2C heterostructure directly grown by chemical vapor deposition

    • Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.
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