Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs

We report our results on the modeling of the spectral response of the near-infrared (NIR) lattice-matched p-n-p In_0.53Ga_0.47As/InP heterojunction phototransistors (HPTs). The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary conditions. In addition, a detailed optical-power absorption profile is constructed for the device modeling. The calculated responsivity is in good agreement with the measured one for the incident radiation at 980 nm, 1310 nm, and 1550 nm. Furthermore, the variation in the responsivity of the device with the base region width is analyzed.