High-performance germanium n⁺/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

High-performance Ge n⁺/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n⁺/p junction has a rectification ratio of 5.6×10⁴ and a forward current of 387 A/cm² at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.