Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D_it) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.