Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors E_ij within 3.83% show the great agreement between the simulated S-parameters and the measured data.