Modeling the reactive sputter deposition of Ti-doped VO_x thin films

In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VO_x deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VO_x thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.