Photodetachment microscopy of H^- in the magnetic field near different dielectric surfaces

We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory. We give a clear physical picture describing the photo-detachment of H^- in this case. The electron flux distributions are calculated at various dielectric surfaces with unchanged magnetic field strength. It is found that the electron flux distributions of H^- are very different in a magnetic field near different dielectric surfaces, namely the dielectric surface has a great influence on the photo-detachment interference pattern of the negative ion. Therefore, the interference pattern in the detached-electron flux distribution can be controlled by changing the dielectric constant. We hope that our studies may guide the future experimental research in photo-detachment microscopy.