Room-temperature terahertz detection based on CVD graphene transistor

We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO₂/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz^1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.