Cite this article:
Hu Mei-Hua, Bi Ning, Li Shang-Sheng, Su Tai-Chao, Zhou Ai-Guo, Hu Qiang, Jia Xiao-Peng, Ma Hong-An. Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditionsJ. Chin. Phys. B, 2015, 24(3): 038101.
| Hu Mei-Hua, Bi Ning, Li Shang-Sheng, Su Tai-Chao, Zhou Ai-Guo, Hu Qiang, Jia Xiao-Peng, Ma Hong-An. Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditionsJ. Chin. Phys. B, 2015, 24(3): 038101. |
Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditions
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Abstract
This paper reports the crystal growth of diamond from the FeNi-Carbon system with additive phosphorus at high pressures and high temperatures of 5.4-5.8 GPa and 1280-1360℃. Attributed to the presence of additive phosphorus, the pressure and temperature condition, morphology, and color of diamond crystals change obviously. The pressure and temperature condition of diamond growth increases evidently with the increase of additive phosphorus content and results in the moving up of the V-shape region. The surfaces of the diamonds also become coarse as the additive phosphorus added in the growth system. Raman spectra indicate that diamonds grown from the FeNi-phosphorus-carbon system have more crystal defects and impurities. This work provides a new way to enrich the doping of diamond and improve the experimental exploration for future material applications. -
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