Cite this article:
Guo Hong-Yan, Ge Chang-Chun, Xia Min, Guo Li-Ping, Chen Ji-Hong, Yan Qing-Zhi. Effect of helium implantation on SiC and graphiteJ. Chin. Phys. B, 2015, 24(3): 037803.
Guo Hong-Yan, Ge Chang-Chun, Xia Min, Guo Li-Ping, Chen Ji-Hong, Yan Qing-Zhi. Effect of helium implantation on SiC and graphiteJ. Chin. Phys. B, 2015, 24(3): 037803.
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Effect of helium implantation on SiC and graphite
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Abstract
Effects of helium implantation on silicon carbide (SiC) and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He+ ions of 20 keV and 100 keV at different temperatures and different fluences. The He+ irradiation induced microstructure changes were studied by field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). -
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