Synthesis and electrical properties of In₂O₃(ZnO)_m superlattice nanobelt

One-dimensional (1D) In₂O₃(ZnO)_m superlattice nanobelts are synthesized by a chemical vapor deposition method. The formation of the In₂O₃(ZnO)_m superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm^-1 is found in the Raman spectrum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In₂O₃(ZnO)_m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in the photocurrent property between them, and their transport mechanisms are also discussed.