Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

An obvious weak localization correction to anomalous Hall conductance (AHC) in very thin CoFeB film is reported. We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness. When the film is thicker than 3 nm, the side jump mechanism dominates and the weak localization to AHC vanishes. For very thin CoFeB films, both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect, and the weak localization correction to AHC is observed.