Cite this article:
Xie Hui, Zhao You-Wen, Liu Tong, Dong Zhi-Yuan, Yang Jun, Liu Jing-Ming. C–H complex defects and their influence in ZnO single crystalJ. Chin. Phys. B, 2015, 24(10): 107704.
| Xie Hui, Zhao You-Wen, Liu Tong, Dong Zhi-Yuan, Yang Jun, Liu Jing-Ming. C–H complex defects and their influence in ZnO single crystalJ. Chin. Phys. B, 2015, 24(10): 107704. |
C–H complex defects and their influence in ZnO single crystal
-
Abstract
Infrared absorption local vibration mode (LVM) spectroscopy is used to study hydrogen related defects in n-type ZnO single crystal grown by a closed chemical vapor transport (CVT) method under Zn-rich growth conditions, in which carbon is used as a transport agent. Two C-H complex related absorption peaks at 2850 cm-1 and 2919 cm-1 are detected in the sample. The formation of the C-H complex implies an effect of carbon donor passivation and formation suppression of H donor in ZnO. The influence of the complex defects on the electrical property of the CVT-ZnO is discussed based on Hall measurement results and residual impurity analysis. -
DownLoad: