GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with an atomic layer deposited Al₂O₃ gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the underlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.