Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F₄-TCNQ) and MoO₃ for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F₄-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO₃ layer between the F₄-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO₃ layer and the Au electrode.