Complete coverage of reduced graphene oxide on silicon dioxide substrates

Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (< US1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition (CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.