Bipolar resistance switching in the fully transparent BaSnO₃-based memory device

The fully transparent indium-tin-oxide/BaSnO₃/F-doped SnO₂ devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO₃ will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interfacial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO₃ for the application of resistive random access memory to transparent electronics.