Phase transformation in Mg–Sb₃Te thin films

Mg-doped Sb₃Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb₃Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb₃Te. Especially Mg_25.19(Sb₃Te)_74.81 shows higher T_c (～ 190 ℃) and larger E_a (～ 3.49 eV), which results in a better data retention maintaining for 10 yr at ～ 112 ℃. Moreover R_a/R_c value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory (PCM).