4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO₂ dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 uA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.