Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.