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    Yang Qian-Qian, Yang Dao-Bin, Zhao Su-Ling, Huang Yan, Xu Zheng, Gong Wei, Fan Xing, Liu Zhi-Fang, Huang Qing-Yu, Xu Xu-Rong. UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devicesJ. Chin. Phys. B, 2014, 23(3): 038405.
    Yang Qian-Qian, Yang Dao-Bin, Zhao Su-Ling, Huang Yan, Xu Zheng, Gong Wei, Fan Xing, Liu Zhi-Fang, Huang Qing-Yu, Xu Xu-Rong. UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devicesJ. Chin. Phys. B, 2014, 23(3): 038405.
  • UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devices

    • The enhanced performance of a squaraine compound, with 2,4-bis4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl squaraine as the donor and 6,6-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed organic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm2) is obtained.
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