Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films

In this work, the resistive switching behaviors of ferroelectrictric BaTiO₃/La_0.67Sr_0.33MnO₃ heterostructures deposited by pulsed laser deposition are investigated. The BaTiO₃ films show both well-established P–E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (V_max). At a V_max of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a V_max of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I–V curve fitting.