AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

The influence of atomic layer deposition parameters on the negative charge density in AlO_x film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10¹² cm^-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlO_x passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.