Effect of Si-doped In_0.49Ga_0.51P barrier layer on the device performance of In_0.4Ga_0.6As MOSFETs grown onsemi-insulating GaAs substrate

In_0.4Ga_0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without Si-doped In_0.49Ga_0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In_0.4Ga_0.6As MOSFETs without In_0.49Ga_0.51P barrier layer, In_0.4Ga_0.6As MOSFETs with In_0.49Ga_0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In_0.4Ga_0.6As MOSFETs (gate length 2 μm) with In_0.49Ga_0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm²/(V·s).