Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.