The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

InGaN/GaN p–i–n solar cells, each with an undoped In_0.12Ga_0.88N absorption layer, are grown on c-plane sapphire substrates by metal–organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaNbased solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.