High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar

A novel super-junction lateral double diffused metal-oxide semiconductor (SJ-LDMOS) with partial lightly doped P pillar (PD) is proposed. Firstly, the reduction of the charges in the partial P pillar ensures the charge balance and suppresses the substrate assisted depletion effect. Secondly, the new electric field peak produced by P/P^- junction modulates the surface electric field distribution. Both of them result in a high breakdown voltage (BV). In addition, due to the same conduction paths, the specific on-resistance (R_on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at 15-μm drift length, resulting in a BV of 300 V.