Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.