Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films

This paper presents an overview of growth of Bi₂Se₃, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between growth of Bi₂Se₃ (111) on van der Waals (vdW) and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the 221 direction of Bi₂Se₃ on InP (001) and GaAs (001) substrates is also discussed.