Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B⁺, P⁺, and As⁺ ion implantation at doses ranging from 1×10¹¹ cm^-2 to 1×10¹⁶ cm^-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and lifetime extracted from the transient PCR signals.