Cite this article:
Hu Xin-Bo, Hu Ling, Luo Xuan, Zhao Bang-Chuan, Sun Yu-Ping. Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm1-xCexVO3J. Chin. Phys. B, 2013, 22(4): 047501.
| Hu Xin-Bo, Hu Ling, Luo Xuan, Zhao Bang-Chuan, Sun Yu-Ping. Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm1-xCexVO3J. Chin. Phys. B, 2013, 22(4): 047501. |
Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm1-xCexVO3
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Abstract
The effects of Ce-doping on the phase transition of the orbital/spin ordering (OO/SO) are studied through the structural, magnetic, and electrical transport measurements of perovskite vanadate Sm1-xCexVO3. The measurements of structure show that the cell volume decreases as x ≤ 0.05, and then increases as Ce-doping level increases further. The OO state exists but is suppressed progressively in the sample with x ≤ 0.2 and disappears as x>0.2. The temperature at which the C-type SO transition is present increases monotonically with Ce-doping level increasing. The temperature dependence of resistivity for each of all samples shows a semiconducting transport behavior and the transport can be well described by the thermal activation model. The activation energy first decreases as x ≤ 0.2, and then increases for further doping. The obtained results are discussed in terms of the mixed-valent state of the doped-Ce ions. -
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