Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

The hot carrier effect (HCE) of ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (V_d) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.