Dual role of multiple-transistor charge sharing collection in single-event transient

As technologies scale down in size, that multiple-transistors are affected by a single ion becomes a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in two-transistor inverter chain, due to the charge sharing collection and the electrical interaction, the SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by ion's striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in three-transistor inverter in depth, and the study illustrates that three-transistor inverter is still the better replacer for spaceborne integrated circuits design in the advanced technologies.