Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor brings much attention to this study. Those researches focus on resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are present. We give the prospect of different materials used in resistive RAM on account of resistive switching mechanisms, which are applied to explain their resistive switchings.