Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

This study focuses on the effect of V-doping on the ferromagnetism (FM) of 6H-SiC powder. The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice. The Raman spectra reveale that with a V concentration of 25 ppm, the crystalline quality and carrier concentration of 6H-SiC are hardly varied. It is found that after V-doping process, the saturation magnetization (M_s) and the vacancy concentration of 6H-SiC are both increased. From these results, it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration, thus resulting in the increase of M_s of V-doped 6H-SiC.