0.15-μm T-gate In_0.52Al_0.48As/In_0.53Ga_0.47As InP-based HEMT with f_max of 390 GHz

In this paper, 0.15-μm gate-length In_0.52Al_0.48As/In_0.53Ga_0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance (g_m,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage (BV_GD) defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency (f_T) of 164 GHz and a maximum oscillation frequency (f_max) of 390 GHz are successfully obtained; moreover, the f_max of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high g_m,max, BV_GD, f_max, and channel current collectively make this device a good candidate for high frequency power applications.