Curved surface effect and emission on silicon nanostructures

The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as L_N, L_NO, L_O1, and L_O2 lines in PL spectra due to Si–N, Si–NO, Si=O, and Si–O–Si bonds on curved surface, respectively. Si–Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the L_Yb line of electroluminescence (EL) emission.