Cite this article:
Xia Lei, Zhong Kai, Song Yang, Lu Xin, Xu Lü-Shun, Yan Yan, Li Hong-Dong, Yuan Fang-Li, Jiang Jian-Zhong, Yu Da-Peng, Zhang Shu-Lin. Finite size effect on Raman frequency of phonons in nano-semiconductorsJ. Chin. Phys. B, 2012, 21(9): 097801.
| Xia Lei, Zhong Kai, Song Yang, Lu Xin, Xu Lü-Shun, Yan Yan, Li Hong-Dong, Yuan Fang-Li, Jiang Jian-Zhong, Yu Da-Peng, Zhang Shu-Lin. Finite size effect on Raman frequency of phonons in nano-semiconductorsJ. Chin. Phys. B, 2012, 21(9): 097801. |
Finite size effect on Raman frequency of phonons in nano-semiconductors
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Abstract
A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to be originated from the long-range Fröhlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors. -
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