Activation of silicon quantum dots for emission

Emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dots can break the passivation to form localized electronic states in band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matters for emission. By controlling the surface bonds of silicon quantum dots, emissions of various wavelengths can be obtained. Our experimental results demonstrate that annealing is important in treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.