Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer

In this paper we report on a novel structure of 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at I_C=28.6 mA (J_C=183.4 A/cm²), and it increases with the collector current density increasing. The specific on-state resistance (R_sp-on) is 32.3 mΩ·cm² and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N ⁺ emitter layer sheet resistance are 1.7× 10^{-3 Ω·cm2 and 150} Ω /□, respectively.