Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

We report on the performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InAlN/GaN high electron mobility transistors (HEMTs). The MOSHEMT presents a maximum drain current of 961 mA/mm at V_gs=4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at V_gs=1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.