The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency (RF) magnetron sputtering at ambient temperature. The MoO₃ content in the target varies from 0 to 5 wt%, and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis. The resistivity first decreases and then increases with the increase in MoO₃ content. The lowest resistivity achieved is 9.2 × 10^-4 Ω·cm, with a high Hall mobility of 30 cm²·V^-1·s^-1 and a carrier concentration of 2.3 × 10²⁰ cm^-3 at an MoO₃ content of 2 wt%. The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO₃ content in the target.